Rashid Ahmed Rifat

Engineer & Researcher



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Rashid Ahmed Rifat

Ph.D Researcher, Battery Innovation Centre, MOBI, VUB | Erasmus Mundus Scholar 2021-2023



Dept. Electrical Engineering & Energy Technology

Vrije Universiteit Brussel




Rashid Ahmed Rifat

Engineer & Researcher



Dept. Electrical Engineering & Energy Technology

Vrije Universiteit Brussel



The Use of Plasmonic Metal Nanoparticles to Enhance the Efficiency of Thin-Film Silicon (Si) and Gallium Arsenide (GaAs) Solar Cells – A Comparative Study


Conference paper


Rashid Ahmed Rifat, Nahid Ibn Ashraf, Saniat Ahmed Chowdhury, Mustafa Habib Chowdhury
2018 International Conference and Utility Exhibition on Green Energy for Sustainable Development (ICUE), 2018, pp. 1-9


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APA   Click to copy
Rifat, R. A., Ibn Ashraf, N., Chowdhury, S. A., & Chowdhury, M. H. (2018). The Use of Plasmonic Metal Nanoparticles to Enhance the Efficiency of Thin-Film Silicon (Si) and Gallium Arsenide (GaAs) Solar Cells – A Comparative Study. In 2018 International Conference and Utility Exhibition on Green Energy for Sustainable Development (ICUE) (pp. 1–9). https://doi.org/10.23919/ICUE-GESD.2018.8635588


Chicago/Turabian   Click to copy
Rifat, Rashid Ahmed, Nahid Ibn Ashraf, Saniat Ahmed Chowdhury, and Mustafa Habib Chowdhury. “The Use of Plasmonic Metal Nanoparticles to Enhance the Efficiency of Thin-Film Silicon (Si) and Gallium Arsenide (GaAs) Solar Cells – A Comparative Study.” In 2018 International Conference and Utility Exhibition on Green Energy for Sustainable Development (ICUE), 1–9, 2018.


MLA   Click to copy
Rifat, Rashid Ahmed, et al. “The Use of Plasmonic Metal Nanoparticles to Enhance the Efficiency of Thin-Film Silicon (Si) and Gallium Arsenide (GaAs) Solar Cells – A Comparative Study.” 2018 International Conference and Utility Exhibition on Green Energy for Sustainable Development (ICUE), 2018, pp. 1–9, doi:10.23919/ICUE-GESD.2018.8635588.


BibTeX   Click to copy

@inproceedings{rifat2018a,
  title = {The Use of Plasmonic Metal Nanoparticles to Enhance the Efficiency of Thin-Film Silicon (Si) and Gallium Arsenide (GaAs) Solar Cells – A Comparative Study},
  year = {2018},
  pages = {1-9},
  volume = {},
  doi = {10.23919/ICUE-GESD.2018.8635588},
  author = {Rifat, Rashid Ahmed and Ibn Ashraf, Nahid and Chowdhury, Saniat Ahmed and Chowdhury, Mustafa Habib},
  booktitle = {2018 International Conference and Utility Exhibition on Green Energy for Sustainable Development (ICUE)}
}

Abstract:  This study compares the response of thin-film silicon and gallium arsenide solar cells to the use of plasmonic metal nanoparticles for modifying their respective opto-electronic behavior. Square arrays of silver nanoparticles were placed at different inter-particle distances on top of a thin film of Silicon and gallium-arsenide substrate, respectively. The absorption of incident sunlight within each solar cell type is analyzed, and compared to the short circuit current density, open circuit voltage and the output power generated from each solar cell type due to the effect of the plasmonic nanoparticles. It is found that gallium-arsenide shows larger values than Silicon of the short circuit current generated, open circuit voltage, the fill-factor and the output power generated. These results show the effect of plasmonic metal nanoparticles to increase the optoelectronic efficiency of thin-film solar cells is not limited to only Silicon substrates but extends to other commonly used semiconductor substrates. 




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